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14f5c75
add model
jClugstor fad46f6
add docstrings and PNP
jClugstor c8600d3
add docstrings to docs page
jClugstor 88a09c9
no component descriptions
jClugstor 92496e5
add tests
jClugstor 55a3781
include in electrical library
jClugstor d8a2bcf
remove another description
jClugstor 74053c1
Update src/Electrical/Analog/transistors.jl
ChrisRackauckas 92ef325
Update src/Electrical/Analog/transistors.jl
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@@ -34,6 +34,8 @@ IdealOpAmp | |
Diode | ||
HeatingDiode | ||
VariableResistor | ||
PNP | ||
NPN | ||
``` | ||
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## Analog Sensors | ||
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""" | ||
NPN(;name, B_F, B_R, Is, V_T, V_A, phi_C, phi_E, Z_C, Z_E, Tau_f, Tau_r, C_jC0, C_jE0, C_CS, gamma_C, gamma_E, NF, NR) | ||
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Creates an NPN Bipolar Junction Transistor following a modified Ebers-Moll model. Includes an optional substrate pin and optional | ||
Early voltage effect. | ||
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# Structural Parameters | ||
- `use_substrate`: If `true`, a substrate pin connector is available. If `false` it is | ||
assumed the substrate is connected to the collector pin. | ||
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- `use_Early`: If `true`, the Early effect is modeled, which takes in to account the effect | ||
collector-base voltage variations have on the collector-base depletion region. In many cases this | ||
effectively means that the collector current has a dependency on the collector-emitter voltage. | ||
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- `use_advanced_continuation`: When false, the `C_jC` and `C_jE` non-linear capacitance curves use | ||
a simplified linear continuation starting when `V_BC` and `V_BE` are 0, respectively. If `true`, the `Z_C` and `Z_E` parameters | ||
are used to start the linear continuation at `Phi_C - Z_C` and `Phi_E - Z_E`. | ||
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# Connectors | ||
- `b` Base Pin | ||
- `c` Collector Pin | ||
- `e` Emitter Pin | ||
- `s` Substrate Pin, only available when `use_substrate = true` | ||
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# Parameters | ||
- `B_F`: Forward beta | ||
- `B_R`: Reverse beta | ||
- `Is`: Saturation current | ||
- `V_T`: Thermal voltage at 300K | ||
- `V_A`: Inverse Early voltage | ||
- `phi_C`: Collector junction exponent | ||
- `phi_E`: Emitter junction exponent | ||
- `Z_C`: Collector junction offset | ||
- `Z_E`: Emitter junction offset | ||
- `Tau_f`: Forward transit time | ||
- `Tau_r`: Reverse transit time | ||
- `C_jC0`: Collector junction capacitance coefficient | ||
- `C_jE0`: Emitter junction capacitance coefficient | ||
- `C_CS`: Collector-substrate capacitance | ||
- `gamma_C`: Collector junction exponent | ||
- `gamma_E`: Emitter junction exponent | ||
- `NF`: Forward emission coefficient | ||
- `NR`: Reverse emission coefficient | ||
""" | ||
@mtkmodel NPN begin | ||
@variables begin | ||
V_BE(t) | ||
V_BC(t) | ||
ICC(t) | ||
IEC(t) | ||
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C_jC(t) | ||
C_jE(t) | ||
C_DC(t) | ||
C_DE(t) | ||
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I_sub(t) | ||
V_sub(t) | ||
V_CS(t) | ||
end | ||
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@structural_parameters begin | ||
use_substrate = false | ||
use_Early = true | ||
use_advanced_continuation = false | ||
end | ||
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@components begin | ||
b = Pin() | ||
e = Pin() | ||
c = Pin() | ||
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if use_substrate | ||
s = Pin() | ||
end | ||
end | ||
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@parameters begin | ||
B_F = 50.0, [description = "Forward beta"] | ||
B_R = 0.1, [description = "Reverse beta"] | ||
Is = 1e-16, [description = "Saturation current"] | ||
V_T = 0.026, [description = "Thermal voltage at 300K"] | ||
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if use_Early | ||
V_A = 0.02, [description = "Inverse Early voltage"] | ||
end | ||
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phi_C = 0.8, [description = "Collector junction scaling factor"] | ||
phi_E = 0.6, [description = "Emitter junction scaling factor"] | ||
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if use_advanced_continuation | ||
Z_C = 0.1, [description = "Collector junction offset"] | ||
Z_E = 0.1, [description = "Emitter junction offset"] | ||
end | ||
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Tau_f = 0.12e-9, [description = "Forward transit time"] | ||
Tau_r = 5e-9, [description = "Reverse transit time"] | ||
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C_jC0 = 0.5e-12, [description = "Collector-junction capacitance coefficient"] | ||
C_jE0 = 0.4e-12, [description = "Emitter-junction capacitance coefficient"] | ||
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C_CS = 1e-12, [description = "Collector-substrate capacitance"] | ||
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gamma_C = 0.5, [description = "Collector junction exponent"] | ||
gamma_E = 1.0 / 3.0, [description = "Emitter junction exponent"] | ||
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NF = 1.0, [description = "Forward ideality exponent"] | ||
NR = 1.0, [description = "Reverse ideality exponent"] | ||
end | ||
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@equations begin | ||
V_BE ~ b.v - e.v | ||
V_BC ~ b.v - c.v | ||
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ICC ~ Is * (exp(V_BE / V_T) - 1) | ||
IEC ~ Is * (exp(V_BC / V_T) - 1) | ||
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if !use_advanced_continuation | ||
C_jC ~ ifelse(V_BC / phi_C > 0.0, 1 + gamma_C * V_BC / phi_C, | ||
(C_jC0) / (1 - V_BC / phi_C)^gamma_C) | ||
C_jE ~ ifelse(V_BE / phi_E > 0.0, 1 + gamma_E * V_BE / phi_E, | ||
(C_jE0) / (1 - V_BE / phi_E)^gamma_E) | ||
end | ||
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if use_advanced_continuation | ||
C_jC ~ if V_BC > phi_C - Z_C | ||
((C_jC0 * gamma_C * (1 - ((phi_C - Z_C) / phi_C))^(-gamma_C - 1)) / phi_C) * | ||
V_BC - | ||
((C_jC0 * gamma_C * (1 - ((phi_C - Z_C) / phi_C))^(-gamma_C - 1)) / phi_C) * | ||
(phi_C - Z_C) + (C_jC0) / (1 - (phi_C - Z_C) / phi_C)^gamma_C | ||
else | ||
(C_jC0) / (1 - V_BC / phi_C)^gamma_C | ||
end | ||
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C_jE ~ if V_BE > phi_E - Z_E | ||
((C_jE0 * gamma_E * (1 - ((phi_E - Z_E) / phi_E))^(-gamma_E - 1)) / phi_E) * | ||
V_BE - | ||
((C_jE0 * gamma_E * (1 - ((phi_E - Z_E) / phi_E))^(-gamma_E - 1)) / phi_E) * | ||
(phi_E - Z_E) + (C_jE0) / (1 - (phi_E - Z_E) / phi_E)^gamma_E | ||
else | ||
(C_jE0) / (1 - V_BE / phi_E)^gamma_E | ||
end | ||
end | ||
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C_DE ~ Tau_f * (Is / (NF * V_T)) * exp(V_BE / (NF * V_T)) | ||
C_DC ~ Tau_r * (Is / (NR * V_T)) * exp(V_BC / (NR * V_T)) | ||
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if use_substrate | ||
s.i ~ I_sub | ||
s.v ~ V_sub | ||
V_CS ~ c.v - V_sub | ||
end | ||
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if !use_substrate | ||
V_sub ~ c.v | ||
end | ||
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I_sub ~ ifelse(use_substrate, -C_CS * D(V_CS), -C_CS * D(V_sub)) | ||
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c.i ~ (ICC - IEC) * ifelse(use_Early, (1 - V_BC * V_A), 1.0) - IEC / B_R - | ||
(C_jC + C_DC) * D(V_BC) - I_sub | ||
b.i ~ IEC / B_R + ICC / B_F + (C_jC + C_DC) * D(V_BC) + (C_jE + C_DE) * D(V_BE) | ||
e.i ~ -c.i - b.i - I_sub | ||
end | ||
end | ||
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""" | ||
PNP(;name, B_F, B_R, Is, V_T, V_A, phi_C, phi_E, Z_C, Z_E, Tau_f, Tau_r, C_jC0, C_jE0, C_CS, gamma_C, gamma_E, NF, NR) | ||
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Creates a PNP Bipolar Junction Transistor following a modified Ebers-Moll model. Includes an optional substrate pin and optional | ||
Early voltage effect. | ||
|
||
# Structural Parameters | ||
- `use_substrate`: If `true`, a substrate pin connector is available. If `false` it is | ||
assumed the substrate is connected to the collector pin. | ||
|
||
- `use_Early`: If `true`, the Early effect is modeled, which takes in to account the effect | ||
collector-base voltage variations have on the collector-base depletion region. In many cases this | ||
effectively means that the collector current has a dependency on the collector-emitter voltage. | ||
|
||
- `use_advanced_continuation`: When false, the `C_jC` and `C_jE` non-linear capacitance curves use | ||
a simplified linear continuation starting when `V_CB` and `V_EB` are 0, respectively. If `true`, the `Z_C` and `Z_E` parameters | ||
are used to start the linear continuation at `Phi_C - Z_C` and `Phi_E - Z_E`. | ||
|
||
# Connectors | ||
- `b` Base Pin | ||
- `c` Collector Pin | ||
- `e` Emitter Pin | ||
- `s` Substrate Pin, only available when `use_substrate = true` | ||
|
||
# Parameters | ||
- `B_F`: Forward beta | ||
- `B_R`: Reverse beta | ||
- `Is`: Saturation current | ||
- `V_T`: Thermal voltage at 300K | ||
- `V_A`: Inverse Early voltage | ||
- `phi_C`: Collector junction exponent | ||
- `phi_E`: Emitter junction exponent | ||
- `Z_C`: Collector junction offset | ||
- `Z_E`: Emitter junction offset | ||
- `Tau_f`: Forward transit time | ||
- `Tau_r`: Reverse transit time | ||
- `C_jC0`: Collector junction capacitance coefficient | ||
- `C_jE0`: Emitter junction capacitance coefficient | ||
- `C_CS`: Collector-substrate capacitance | ||
- `gamma_C`: Collector junction exponent | ||
- `gamma_E`: Emitter junction exponent | ||
- `NF`: Forward emission coefficient | ||
- `NR`: Reverse emission coefficient | ||
""" | ||
@mtkmodel PNP begin | ||
@variables begin | ||
V_EB(t) | ||
V_CB(t) | ||
ICC(t) | ||
IEC(t) | ||
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C_jC(t) | ||
C_jE(t) | ||
C_DC(t) | ||
C_DE(t) | ||
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I_sub(t) | ||
V_sub(t) | ||
V_CS(t) | ||
end | ||
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@structural_parameters begin | ||
use_substrate = false | ||
use_Early = true | ||
use_advanced_continuation = false | ||
end | ||
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@components begin | ||
b = Pin() | ||
e = Pin() | ||
c = Pin() | ||
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if use_substrate | ||
s = Pin() | ||
end | ||
end | ||
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@parameters begin | ||
B_F = 50.0, [description = "Forward beta"] | ||
B_R = 0.1, [description = "Reverse beta"] | ||
Is = 1e-16, [description = "Saturation current"] | ||
V_T = 0.026, [description = "Thermal voltage at 300K"] | ||
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if use_Early | ||
V_A = 0.02, [description = "Inverse Early voltage"] | ||
end | ||
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phi_C = 0.8, [description = "Collector junction scaling factor"] | ||
phi_E = 0.6, [description = "Emitter junction scaling factor"] | ||
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if use_advanced_continuation | ||
Z_C = 0.1, [description = "Collector junction offset"] | ||
Z_E = 0.1, [description = "Emitter junction offset"] | ||
end | ||
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Tau_f = 0.12e-9, [description = "Forward transit time"] | ||
Tau_r = 5e-9, [description = "Reverse transit time"] | ||
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C_jC0 = 0.5e-12, [description = "Collector-junction capacitance coefficient"] | ||
C_jE0 = 0.4e-12, [description = "Emitter-junction capacitance coefficient"] | ||
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C_CS = 1e-12, [description = "Collector-substrate capacitance"] | ||
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gamma_C = 0.5, [description = "Collector junction exponent"] | ||
gamma_E = 1.0 / 3.0, [description = "Emitter junction exponent"] | ||
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NF = 1.0, [description = "Forward ideality exponent"] | ||
NR = 1.0, [description = "Reverse ideality exponent"] | ||
end | ||
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@equations begin | ||
V_EB ~ e.v - b.v | ||
V_CB ~ c.v - b.v | ||
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ICC ~ Is * (exp(V_EB / V_T) - 1) | ||
IEC ~ Is * (exp(V_CB / V_T) - 1) | ||
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if !use_advanced_continuation | ||
C_jC ~ ifelse(V_CB / phi_C > 0.0, 1 + gamma_C * V_CB / phi_C, | ||
(C_jC0) / (1 - V_CB / phi_C)^gamma_C) | ||
C_jE ~ ifelse(V_EB / phi_E > 0.0, 1 + gamma_E * V_EB / phi_E, | ||
(C_jE0) / (1 - V_EB / phi_E)^gamma_E) | ||
end | ||
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if use_advanced_continuation | ||
C_jC ~ if V_CB > phi_C - Z_C | ||
((C_jC0 * gamma_C * (1 - ((phi_C - Z_C) / phi_C))^(-gamma_C - 1)) / phi_C) * | ||
V_CB - | ||
((C_jC0 * gamma_C * (1 - ((phi_C - Z_C) / phi_C))^(-gamma_C - 1)) / phi_C) * | ||
(phi_C - Z_C) + (C_jC0) / (1 - (phi_C - Z_C) / phi_C)^gamma_C | ||
else | ||
(C_jC0) / (1 - V_CB / phi_C)^gamma_C | ||
end | ||
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C_jE ~ if V_EB > phi_E - Z_E | ||
((C_jE0 * gamma_E * (1 - ((phi_E - Z_E) / phi_E))^(-gamma_E - 1)) / phi_E) * | ||
V_BE - | ||
((C_jE0 * gamma_E * (1 - ((phi_E - Z_E) / phi_E))^(-gamma_E - 1)) / phi_E) * | ||
(phi_E - Z_E) + (C_jE0) / (1 - (phi_E - Z_E) / phi_E)^gamma_E | ||
else | ||
(C_jE0) / (1 - V_BE / phi_E)^gamma_E | ||
end | ||
end | ||
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C_DE ~ Tau_f * (Is / (NF * V_T)) * exp(V_EB / (NF * V_T)) | ||
C_DC ~ Tau_r * (Is / (NR * V_T)) * exp(V_CB / (NR * V_T)) | ||
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if use_substrate | ||
s.i ~ I_sub | ||
s.v ~ V_sub | ||
V_CS ~ c.v - V_sub | ||
end | ||
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if !use_substrate | ||
V_sub ~ c.v | ||
end | ||
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I_sub ~ ifelse(use_substrate, -C_CS * D(V_CS), -C_CS * D(V_sub)) | ||
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c.i ~ IEC / B_R - (ICC - IEC) * ifelse(use_Early, (1 - V_CB * V_A), 1.0) + | ||
(C_jC + C_DC) * D(V_CB) - I_sub | ||
b.i ~ -IEC / B_R - ICC / B_F - (C_jC + C_DC) * D(V_CB) - (C_jE + C_DE) * D(V_EB) | ||
e.i ~ -c.i - b.i - I_sub | ||
end | ||
end |
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