From ab60793e27bc14b317d5c4693e87afbe24f244e2 Mon Sep 17 00:00:00 2001 From: Taos Transue Date: Tue, 1 Aug 2023 13:54:14 -0700 Subject: [PATCH 1/4] updating bishop88 docs --- pvlib/singlediode.py | 30 +++++++++++++++--------------- 1 file changed, 15 insertions(+), 15 deletions(-) diff --git a/pvlib/singlediode.py b/pvlib/singlediode.py index cfc63f3591..e7a8e20131 100644 --- a/pvlib/singlediode.py +++ b/pvlib/singlediode.py @@ -98,24 +98,24 @@ def bishop88(diode_voltage, photocurrent, saturation_current, nNsVth : numeric product of thermal voltage :math:`V_{th}` [V], diode ideality factor :math:`n`, and number of series cells :math:`N_{s}` [V] - d2mutau : numeric, default 0 + d2mutau : float, default 0 PVsyst parameter for cadmium-telluride (CdTe) and amorphous-silicon (a-Si) modules that accounts for recombination current in the intrinsic layer. The value is the ratio of intrinsic layer thickness squared :math:`d^2` to the diffusion length of charge carriers :math:`\mu \tau`. [V] - NsVbi : numeric, default np.inf + NsVbi : float, default np.inf PVsyst parameter for cadmium-telluride (CdTe) and amorphous-silicon (a-Si) modules that is the product of the PV module number of series cells :math:`N_{s}` and the builtin voltage :math:`V_{bi}` of the intrinsic layer. [V]. - breakdown_factor : numeric, default 0 + breakdown_factor : float, default 0 fraction of ohmic current involved in avalanche breakdown :math:`a`. Default of 0 excludes the reverse bias term from the model. [unitless] - breakdown_voltage : numeric, default -5.5 + breakdown_voltage : float, default -5.5 reverse breakdown voltage of the photovoltaic junction :math:`V_{br}` [V] - breakdown_exp : numeric, default 3.28 + breakdown_exp : float, default 3.28 avalanche breakdown exponent :math:`m` [unitless] gradients : bool False returns only I, V, and P. True also returns gradients @@ -227,24 +227,24 @@ def bishop88_i_from_v(voltage, photocurrent, saturation_current, nNsVth : numeric product of diode ideality factor (n), number of series cells (Ns), and thermal voltage (Vth = k_b * T / q_e) in volts [V] - d2mutau : numeric, default 0 + d2mutau : float, default 0 PVsyst parameter for cadmium-telluride (CdTe) and amorphous-silicon (a-Si) modules that accounts for recombination current in the intrinsic layer. The value is the ratio of intrinsic layer thickness squared :math:`d^2` to the diffusion length of charge carriers :math:`\\mu \\tau`. [V] - NsVbi : numeric, default np.inf + NsVbi : float, default np.inf PVsyst parameter for cadmium-telluride (CdTe) and amorphous-silicon (a-Si) modules that is the product of the PV module number of series cells ``Ns`` and the builtin voltage ``Vbi`` of the intrinsic layer. [V]. - breakdown_factor : numeric, default 0 + breakdown_factor : float, default 0 fraction of ohmic current involved in avalanche breakdown :math:`a`. Default of 0 excludes the reverse bias term from the model. [unitless] - breakdown_voltage : numeric, default -5.5 + breakdown_voltage : float, default -5.5 reverse breakdown voltage of the photovoltaic junction :math:`V_{br}` [V] - breakdown_exp : numeric, default 3.28 + breakdown_exp : float, default 3.28 avalanche breakdown exponent :math:`m` [unitless] method : str, default 'newton' Either ``'newton'`` or ``'brentq'``. ''method'' must be ``'newton'`` @@ -362,24 +362,24 @@ def bishop88_v_from_i(current, photocurrent, saturation_current, nNsVth : numeric product of diode ideality factor (n), number of series cells (Ns), and thermal voltage (Vth = k_b * T / q_e) in volts [V] - d2mutau : numeric, default 0 + d2mutau : float, default 0 PVsyst parameter for cadmium-telluride (CdTe) and amorphous-silicon (a-Si) modules that accounts for recombination current in the intrinsic layer. The value is the ratio of intrinsic layer thickness squared :math:`d^2` to the diffusion length of charge carriers :math:`\\mu \\tau`. [V] - NsVbi : numeric, default np.inf + NsVbi : float, default np.inf PVsyst parameter for cadmium-telluride (CdTe) and amorphous-silicon (a-Si) modules that is the product of the PV module number of series cells ``Ns`` and the builtin voltage ``Vbi`` of the intrinsic layer. [V]. - breakdown_factor : numeric, default 0 + breakdown_factor : float, default 0 fraction of ohmic current involved in avalanche breakdown :math:`a`. Default of 0 excludes the reverse bias term from the model. [unitless] - breakdown_voltage : numeric, default -5.5 + breakdown_voltage : float, default -5.5 reverse breakdown voltage of the photovoltaic junction :math:`V_{br}` [V] - breakdown_exp : numeric, default 3.28 + breakdown_exp : float, default 3.28 avalanche breakdown exponent :math:`m` [unitless] method : str, default 'newton' Either ``'newton'`` or ``'brentq'``. ''method'' must be ``'newton'`` From 0574291c553e79350dcf4e694f24f79ba5221aa0 Mon Sep 17 00:00:00 2001 From: Taos Transue Date: Wed, 2 Aug 2023 10:52:30 -0700 Subject: [PATCH 2/4] switch PVSyst params from float back to numeric --- pvlib/singlediode.py | 12 ++++++------ 1 file changed, 6 insertions(+), 6 deletions(-) diff --git a/pvlib/singlediode.py b/pvlib/singlediode.py index e7a8e20131..768ab7518c 100644 --- a/pvlib/singlediode.py +++ b/pvlib/singlediode.py @@ -98,13 +98,13 @@ def bishop88(diode_voltage, photocurrent, saturation_current, nNsVth : numeric product of thermal voltage :math:`V_{th}` [V], diode ideality factor :math:`n`, and number of series cells :math:`N_{s}` [V] - d2mutau : float, default 0 + d2mutau : numeric, default 0 PVsyst parameter for cadmium-telluride (CdTe) and amorphous-silicon (a-Si) modules that accounts for recombination current in the intrinsic layer. The value is the ratio of intrinsic layer thickness squared :math:`d^2` to the diffusion length of charge carriers :math:`\mu \tau`. [V] - NsVbi : float, default np.inf + NsVbi : numeric, default np.inf PVsyst parameter for cadmium-telluride (CdTe) and amorphous-silicon (a-Si) modules that is the product of the PV module number of series cells :math:`N_{s}` and the builtin voltage :math:`V_{bi}` of the @@ -227,13 +227,13 @@ def bishop88_i_from_v(voltage, photocurrent, saturation_current, nNsVth : numeric product of diode ideality factor (n), number of series cells (Ns), and thermal voltage (Vth = k_b * T / q_e) in volts [V] - d2mutau : float, default 0 + d2mutau : numeric, default 0 PVsyst parameter for cadmium-telluride (CdTe) and amorphous-silicon (a-Si) modules that accounts for recombination current in the intrinsic layer. The value is the ratio of intrinsic layer thickness squared :math:`d^2` to the diffusion length of charge carriers :math:`\\mu \\tau`. [V] - NsVbi : float, default np.inf + NsVbi : numeric, default np.inf PVsyst parameter for cadmium-telluride (CdTe) and amorphous-silicon (a-Si) modules that is the product of the PV module number of series cells ``Ns`` and the builtin voltage ``Vbi`` of the intrinsic layer. @@ -362,13 +362,13 @@ def bishop88_v_from_i(current, photocurrent, saturation_current, nNsVth : numeric product of diode ideality factor (n), number of series cells (Ns), and thermal voltage (Vth = k_b * T / q_e) in volts [V] - d2mutau : float, default 0 + d2mutau : numeric, default 0 PVsyst parameter for cadmium-telluride (CdTe) and amorphous-silicon (a-Si) modules that accounts for recombination current in the intrinsic layer. The value is the ratio of intrinsic layer thickness squared :math:`d^2` to the diffusion length of charge carriers :math:`\\mu \\tau`. [V] - NsVbi : float, default np.inf + NsVbi : numeric, default np.inf PVsyst parameter for cadmium-telluride (CdTe) and amorphous-silicon (a-Si) modules that is the product of the PV module number of series cells ``Ns`` and the builtin voltage ``Vbi`` of the intrinsic layer. From 183f5e9043cfbe56b8d82edb7bde77b9f3a3ce06 Mon Sep 17 00:00:00 2001 From: Taos Transue Date: Wed, 2 Aug 2023 11:03:15 -0700 Subject: [PATCH 3/4] update whatsnew --- docs/sphinx/source/whatsnew/v0.10.2.rst | 5 +++++ 1 file changed, 5 insertions(+) diff --git a/docs/sphinx/source/whatsnew/v0.10.2.rst b/docs/sphinx/source/whatsnew/v0.10.2.rst index 7259f6a566..c0d9a17787 100644 --- a/docs/sphinx/source/whatsnew/v0.10.2.rst +++ b/docs/sphinx/source/whatsnew/v0.10.2.rst @@ -31,6 +31,11 @@ Documentation ~~~~~~~~~~~~~ * Removed Stickler-CI integration as the service has ceased June 2023. (:issue:`1722`, :pull:`1723`) +* Restricted :py:func:`pvlib.singlediode.bishop88`, + :py:func:`pvlib.singlediode.bishop88_i_from_v`, and + :py:func:`pvlib.singlediode.bishop88_v_from_i` parameters `breakdown_factor`, + `breakdown_voltage`, and `breakdown_exp` to be floats. + (:issue:`1820`, :pull:`1821`) Requirements ~~~~~~~~~~~~ From 26c487fcfa9aa8b4b2ba00aab120390798748a8f Mon Sep 17 00:00:00 2001 From: Taos Transue <41020789+reepoi@users.noreply.github.com> Date: Fri, 11 Aug 2023 09:42:55 -0700 Subject: [PATCH 4/4] Update docs/sphinx/source/whatsnew/v0.10.2.rst Co-authored-by: Cliff Hansen --- docs/sphinx/source/whatsnew/v0.10.2.rst | 4 ++-- 1 file changed, 2 insertions(+), 2 deletions(-) diff --git a/docs/sphinx/source/whatsnew/v0.10.2.rst b/docs/sphinx/source/whatsnew/v0.10.2.rst index c0d9a17787..52aaed46dc 100644 --- a/docs/sphinx/source/whatsnew/v0.10.2.rst +++ b/docs/sphinx/source/whatsnew/v0.10.2.rst @@ -31,10 +31,10 @@ Documentation ~~~~~~~~~~~~~ * Removed Stickler-CI integration as the service has ceased June 2023. (:issue:`1722`, :pull:`1723`) -* Restricted :py:func:`pvlib.singlediode.bishop88`, +* Specified that :py:func:`pvlib.singlediode.bishop88`, :py:func:`pvlib.singlediode.bishop88_i_from_v`, and :py:func:`pvlib.singlediode.bishop88_v_from_i` parameters `breakdown_factor`, - `breakdown_voltage`, and `breakdown_exp` to be floats. + `breakdown_voltage`, and `breakdown_exp` should be floats. (:issue:`1820`, :pull:`1821`) Requirements